| PART |
Description |
Maker |
| QQE40 |
DOUBLE TETRODE FOR USE AS H.F. AMPLIFIER AND OSCILLATOR
|
NXP Semiconductors
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| HD68450Y-6 HD68450Y-8 HD68450-10 |
DMA Controller
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Solder Termination DMA控制
|
Omron Electronics, LLC
|
| 4CX250B-M |
RADIAL BEAM POWER TETRODE
|
Communications & Power Industries, Inc.
|
| BF965 |
Silicon N-Channel MOSFET Tetrode
|
Siemens
|
| BF1005S07 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| 4CM2500KG11 |
MULTI-PHASE COOLED POWER TETRODE
|
Communications & Power Industries, Inc.
|
| CF300 |
N- Channel-GaAs-MESFET-Tetrode Depletion Mode
|
Electronic Theatre Controls, Inc.
|
| BF966SB BF966SA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Intertechnology,Inc.
|
